Recent progress in InAs/InP quantum dash nanostructures and devices

被引：0
|
作者：
Ooi, Boon S. [1 ]
Khan, M. Z. M. [1 ]
Ng, T. K. [1 ]
机构：
[1] King Abdullah Univ Sci & Technol KAUST, Photon Lab, Comp Elect & Math Sci & Engn CEMSE Div, Thuwal 239556900, Saudi Arabia
来源：
2015 IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC) | 2015年
关键词：
quantum dash; InAs/InP material system; broadband emitters; quantum dots;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this talk, we will give an outline and introduction to the broad inter-band emission devices focusing on the InAs/InP quantum dash material system, device physics and establishment of ultrabroad stimulated emission behavior. In addition, technologies for growing these nanostructures as well as engineer the bandgap of quantum dash based system using epitaxy growth techniques and postgrowth intermixing methods will be presented. At device level, we will focus our discussion on our recent progress in extending the ultra-broad lasing emission from quantum dash lasers, and achievements in broad gain semiconductor optical amplifiers (SOA), mode locked lasers, comb-lasers, wide band superluminsect diodes fabricated on this material system.
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页数：2
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