Investigations on optical transitions in InAs/InP quantum dash structures

被引：0

作者：

Kabi, Sanjib ^{[1
]}

Biswas, Abhijit ^{[2
]}

Biswas, Dipankar ^{[2
]}

Biswas, Salil Kumar ^{[1
]}

机构：

[1] Univ Calcutta, Dept Phys, Kolkata 700009, India

[2] Univ Calcutta, Dept Radio Phys & Elect, 92 Acharya Prafulla Chandra Rd, Kolkata 700009, India

来源：

APPLIED NANOSCIENCE | 2012年 / 2卷 / 03期

关键词：

Quantum dot; Quantum dash; Gaussian distribution; Absorption; CROSS-GAIN MODULATION; LASERS; AMPLIFIERS;

D O I：

10.1007/s13204-012-0105-9

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper, we report the dependence of the Gaussian nature of absorption spectra of InAs/InP shallow quantum dot or quantum dash systems on the depth of the dash and also on its relative standard deviation. The dash is considered to be an elongated quantum box with a square base having finite potentials at the boundaries. Our observations reveal that the absorption spectra of the quantum dashes are strongly sensitive to the depth and also on the standard deviation of the dash depth. Predicted results help unveil a better physical insight regarding the optical properties of InAs/InP quantum dash structures. The results are in excellent agreement with reported experimental data of photoluminescence and absorption.

引用

页码：371 / 375

页数：5

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