Analysis of InAs/InP quantum dash lasers

被引：0
|
作者：
Heck, Susannah [1 ]
Osborne, Simon [1 ]
Healy, Sorcha [1 ]
O'Reilly, Eoin P. [1 ,2 ]
Lelarge, Francois [3 ]
Poingt, Francis [3 ]
Accard, Alain [3 ]
Pommereau, Frederic [3 ]
Le Gougezigou, Odile [3 ]
机构：
[1] Tyndall Natl Inst, Cork, Ireland
[2] Univ Coll Cork, Dept Phys, Cork, Ireland
[3] Alcatel Thales Lab 3 5, F-91767 Palaiseau, France
来源：
2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE | 2008年
基金：
爱尔兰科学基金会;
关键词：
D O I：
10.1109/ISLC.2008.4636040
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Calculations show electrons are not confined in the dashes in 1.5 mu m InAs/InGaAsP/InP quantum dash in a well structures. Calculations and photoabsorption measurements show strongly polarised recombination. The threshold current remains dominated by Auger recombination.
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页码：123 / +
页数：2
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