Optical response of incoherent excitons in a dense electron-hole plasma

被引：0

作者：

Schmielau, T ^{[1
]}

Manzke, G ^{[1
]}

Tamme, D ^{[1
]}

Henneberger, K ^{[1
]}

机构：

[1] Univ Rostock, Dept Phys, D-18051 Rostock, Germany

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of a fraction of relaxed excitons in a dense electron-hole plasma onto single particle properties and optical response is studied. Using Green's function techniques the optical susceptibility is expressed in terms of the T-matrix taking into account selfenergies of the carriers depending both on wave-number and energy. Numerical calculation of the T-matrix allows a detailed study of the Mott transition of the excitons. For temperatures above T greater than or equal to 40 X we find, that the Mott transition is already finished when the chemical potential crosses the exciton, preventing excitonic gain discussed for II-VI semiconductors.

引用

页码：81 / 82

页数：2

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