Electron-hole exchange interaction of excitons in quantum wells

被引：0
|
作者：
Puls, J [1 ]
Henneberger, F [1 ]
机构：
[1] Humboldt Univ, Inst Phys, D-10115 Berlin, Germany
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1997年 / 164卷 / 01期
关键词：
D O I：
10.1002/1521-396X(199711)164:1<499::AID-PSSA499>3.0.CO;2-Q
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Applying a magnetic field in Voigt geometry enables the direct observation of dark excitons on (Zn, Cd)Se/ZnSe quantum well structures. We deduce a zero-field electron-hole exchange splitting of 0.51 meV. The enhancement with respect to bulk ZnSe is 2.1. Simultaneous observation of a Raman spin flip process yields a g-factor of 1.09 +/- 0.03 for the neutral donor electron, being very close to g(e) = 1.10 +/- 0.03 deduced for the electron in the exciton.
引用
收藏
页码：499 / 504
页数：6
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