Molecular random access memory cell

被引：511

作者：

Reed, MA ^{[1
]}

Chen, J

Rawlett, AM

Price, DW

Tour, JM

机构：

[1] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA

[2] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA

[3] Yale Univ, Dept Phys, New Haven, CT 06520 USA

[4] Rice Univ, Dept Chem, Houston, TX 77005 USA

[5] Rice Univ, Ctr Nanoscale Sci & Technol, Houston, TX 77005 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 23期

关键词：

D O I：

10.1063/1.1377042

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electronically programmable memory devices utilizing molecular self-assembled monolayers are reported. The devices exhibit electronically programmable and erasable memory bits compatible with conventional threshold levels and a memory cell applicable to a random access memory is demonstrated. Bit retention times > 15 min have been observed. (C) 2001 American Institute of Physics.

引用

页码：3735 / 3737

页数：3

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