Transparent ferroelectric field effect transistor with a single-crystal SnO2 channel

被引：3
|
作者：
Titkov, IE [1 ]
Pronin, IP [1 ]
Liniichuk, IA [1 ]
Grekhov, IV [1 ]
机构：
[1] RAS, Ioffe Inst, St Petersburg 194021, Russia
来源：
INTEGRATED FERROELECTRICS | 2005年 / 72卷
关键词：
ferroelectric field-effect transistor; tindioxide channel; high electron mobility;
D O I：
10.1080/10584580500312818
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The possibility of fabrication of a transparent ferroelectric field effect transistor (FFET) with a high electron mobility channel was demonstrated. The highest obtained electron mobility in the channel SnO2/c-Al2O3 is 25 cm(2)/V(.)s and SnO2/r-Al2O3 is 40 cm(2)/V(.)s at the electron density of 10(19)-10(20) cm(-3). A transparent FFET structure Au/PZT/SnO2/Al2O3 has been fabricated. The best sample had 94% conductivity modulation at the gate voltage from -5 V to 2V. The difference in the channel current at positive and negative remnant polarizations of the undergate ferroelectric is 37%.
引用
收藏
页码：53 / 60
页数：8
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