Transparent ferroelectric field effect transistor with a single-crystal SnO2 channel

The possibility of fabrication of a transparent ferroelectric field effect transistor (FFET) with a high electron mobility channel was demonstrated. The highest obtained electron mobility in the channel SnO2/c-Al2O3 is 25 cm(2)/V(.)s and SnO2/r-Al2O3 is 40 cm(2)/V(.)s at the electron density of 10(19)-10(20) cm(-3). A transparent FFET structure Au/PZT/SnO2/Al2O3 has been fabricated. The best sample had 94% conductivity modulation at the gate voltage from -5 V to 2V. The difference in the channel current at positive and negative remnant polarizations of the undergate ferroelectric is 37%.