Extraction of Floating-Gate Capacitive Parameters in Split-Gate Flash Memory Cells

被引：0

作者：

Tkachev, Yuri ^{[1
]}

机构：

[1] Silicon Storage Technol Inc, 450 Holger Way, San Jose, CA 95134 USA

来源：

2016 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS) | 2016年

关键词：

Flash memory; floating gate; tunneling; capacitance; single-electron transfer; COUPLING-COEFFICIENTS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new fast and simple method for extraction of capacitive coupling coefficients in a split-gate flash memory cell is described. The method is based on the modulation of cell's erase characteristics by the bias applied to the gates during read and erase operations. The absolute values of the capacitance between the floating gate and other nodes are also extracted using the effect of modulation of cell conductance caused by the transfer of individual electrons to/from the floating gate.

引用

页码：110 / 115

页数：6

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