Simulation and optimisation of terahertz emission from InGaAs and InP photoconductive switches

被引：39

作者：

Lloyd-Hughes, J ^{[1
]}

Castro-Camus, E ^{[1
]}

Johnston, MB ^{[1
]}

机构：

[1] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England

来源：

SOLID STATE COMMUNICATIONS | 2005年 / 136卷 / 11-12期

基金：

英国工程与自然科学研究理事会;

关键词：

InP; InGaAs; photoconductive switch; ultrafast photonics; terahertz radiation;

D O I：

10.1016/j.ssc.2005.09.037

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We simulate the terahertz emission from laterally biased InGaAs and InP using a three-dimensional carrier dynamics model in order to optimise the semiconductor material. Incident pump-pulse parameters of current Ti:Sapphire and Er:fibre lasers are chosen, and the simulation models the semiconductor's bandstructure using parabolic T, L and X valleys, and heavy holes. The en-fitted terahertz radiation is propagated within the semiconductor and into free space using a model based on the Drude-Lorentz dielectric function. As the InGaAs alloy approaches InAs an increase in the emitted power is observed, and this is attributed to a greater electron mobility. Additionally, low-temperature grown and ion-implanted InGaAs are modelled using a finite carrier trapping time. At sub-picosecond trapping times the terahertz bandwidth is found to increase significantly at the cost of a reduced emission power. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：595 / 600

页数：6

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