Terahertz emission from InP

被引：0
|
作者：
Hargreaves, S. [1 ]
Lewis, R. A. [1 ]
机构：
[1] Univ Wollongong, Inst Superconducting & Elect Mat, Wollongong, NSW 2522, Australia
来源：
PHYSICS OF SEMICONDUCTORS | 2009年 / 1199卷
关键词：
THz; terahertz; InP; INAS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate the generation of THz radiation by the application of ultra-short near-infrared optical pulses to bulk unbiased InP. The THz radiation is detected in the direction of the specular reflection. While the overall emission characteristics are similar to those displayed by InAs under similar excitation conditions, in contrast to InAs, a single-cycle only variation in THz signal, of about +/- 20%, is observed as the sample is rotated through 360 degrees around the surface normal.
引用
收藏
页码：477 / 478
页数：2
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