Terahertz pulse emission from GaInAsBi

被引：0
|
作者：
Norkus, R. [1 ]
Pacebutas, V [1 ]
Stanionyte, S. [1 ]
Biciunas, A. [1 ]
Urbanowicz, A. [1 ]
Krotkus, A. [1 ]
机构：
[1] Ctr Phys Sci & Technol, Sauletekio Av 3, LT-10222 Vilnius, Lithuania
来源：
2019 44TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2019年
关键词：
D O I：
10.1109/irmmw-thz.2019.8873704
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Quaternary GaInAsBi alloy epitaxial layers were grown on InP substrates with 6% Bi. It was found that layers were stained and had carrier lifetime in order of few picoseconds. THz emission from unbiased surface emitter and fabricated as photoconductive antenna were investigated. It was observed that THz emitters were sensitive to the wavelengths longer than 2 mu m. The demonstrated spectral characteristics of THz pulses obtained when using Er-doped fibre laser for the photoexcitation were comparable with those observed in other emitters used for THz-TDS systems
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