64 μW pulsed terahertz emission from growth optimized InGaAs/InAlAs heterostructures with separated photoconductive and trapping regions

被引：80

作者：

Dietz, Roman J. B. ^{[1
]}

Globisch, Bjoern ^{[1
]}

Gerhard, Marina ^{[2
]}

Velauthapillai, Ajanthkrishna ^{[2
]}

Stanze, Dennis ^{[1
]}

Roehle, Helmut ^{[1
]}

Koch, Martin ^{[2
]}

Goebel, Thorsten ^{[1
]}

Schell, Martin ^{[1
]}

机构：

[1] Heinrich Hertz Inst Nachrichtentech Berlin GmbH, Fraunhofer Inst Telecommun, D-10587 Berlin, Germany

[2] Univ Marburg, Dept Phys, D-35032 Marburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 06期

关键词：

M EXCITATION; SPECTROSCOPY; WAVELENGTHS; GENERATION; ANTENNAS; INGAAS;

D O I：

10.1063/1.4817797

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present results on optimized growth temperatures and layer structure design of high mobility photoconductive Terahertz (THz) emitters based on molecular beam epitaxy grown In0.53Ga0.47As/In0.52Al0.48As multilayer heterostructures (MLHS). The photoconductive antennas made of these MLHS are evaluated as THz emitters in a THz time domain spectrometer and with a Golay cell. We measured a THz bandwidth in excess of 4 THz and average THz powers of up to 64 mu W corresponding to an optical power-to-THz power conversion efficiency of up to 2 x 10(-3). (C) 2013 AIP Publishing LLC.

引用

页数：4

共 2 条

[1] 32 μW pulsed terahertz emission from high mobility InAlAs/InGaAs multi-nanolayer structures
Dietz, R. J. B.
Globisch, B.
Gerhard, M.
Stanze, D.
Koch, M.
Sartorius, B.
Goebel, T.
Schell, M.
[J]. 2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2013,
[2] Pulsed THz emission from low temperature grown Be-doped InGaAs/InAlAs photoconductive switches at 1030 nm excitation
Dietz, R. J. B.
Wilk, R.
Globisch, B.
Roehle, H.
Stanze, D.
Ullrich, S.
Schumann, S.
Born, N.
Voss, N.
Stecher, M.
Koch, M.
Sartorius, B.
Schell, M.
[J]. 2012 37TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2012,

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