Pulsed THz emission from low temperature grown Be-doped InGaAs/InAlAs photoconductive switches at 1030 nm excitation

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|
作者：
Dietz, R. J. B. [1 ]
Wilk, R.
Globisch, B. [1 ]
Roehle, H. [1 ]
Stanze, D. [1 ]
Ullrich, S. [1 ]
Schumann, S.
Born, N.
Voss, N.
Stecher, M.
Koch, M.
Sartorius, B. [1 ]
Schell, M. [1 ]
机构：
[1] Heinrich Hertz Inst Nachrichtentech Berlin GmbH, Fraunhofer Inst Telecommun, Berlin, Germany
来源：
2012 37TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2012年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present first results of pulsed THz emission from low temperature (LT) MBE grown Be-doped InGaAs/InAlAs multi-nanolayer structures at an excitation wavelength of 1030 nm. The spectra obtained reach 3 THz. We further investigate the material's relaxation time constants by differential transmission experiments.
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