Carrier dynamics in Beryllium doped low-temperature-grown InGaAs/InAlAs

被引：49
|
作者：
Globisch, B. [1 ]
Dietz, R. J. B. [1 ]
Stanze, D. [1 ]
Goebel, T. [1 ]
Schell, M. [1 ]
机构：
[1] Heinrich Hertz Inst Nachrichtentech Berlin GmbH, Fraunhofer Inst Telecommun, D-10587 Berlin, Germany
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 17期
关键词：
MOLECULAR-BEAM EPITAXY; GAAS;
D O I：
10.1063/1.4874804
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electron and hole dynamics in low-temperature-grown InGaAs/InAlAs multiple quantum well structures are studied by optical pump-probe transmission measurements for Beryllium (Be) doping levels between 3 x 10(17) cm(-3) and 4 x 10(18) cm(-3). We investigate electron dynamics in the limit cases of unsaturated and completely saturated electron trapping. By expanding a rate equation model in these limits, the details of carrier dynamics are revealed. Electrons are trapped by ionized arsenic antisites, whereas recombination occurs between trapped electrons and holes trapped by negatively charged Be dopants. (C) 2014 AIP Publishing LLC.
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页数：4
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