Low temperature grown photoconductive antennas for pulsed 1060 nm excitation: Influence of excess energy on the electron relaxation

被引：14
|
作者：
Dietz, R. J. B. [1 ]
Brahm, A. [2 ,3 ]
Velauthapillai, A. [4 ]
Wilms, A. [2 ]
Lammers, C. [4 ]
Globisch, B. [1 ]
Koch, M. [4 ]
Notni, G. [2 ]
Tuennermann, A. [2 ,3 ]
Goebel, T. [1 ]
Schell, M. [1 ]
机构：
[1] Heinrich Hertz Inst Nachrichtentech Berlin GmbH, Fraunhofer Inst Telecommun, Berlin, Germany
[2] Fraunhofer Inst Appl Opt & Precis Engn, Jena, Germany
[3] Univ Jena, Inst Appl Phys, Abbe Ctr Photon, Jena, Germany
[4] Univ Marburg, Dept Phys, D-35032 Marburg, Germany
来源：
JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES | 2015年 / 36卷 / 01期
关键词：
Photoconductor; Low Temperature Growth; Terahertz Time Domain Spectroscopy; Transient White Light Spectroscopy; FEMTOSECOND OPTICAL PULSES; TERAHERTZ SPECTROSCOPY; GENERATION; EMISSION; CARRIERS; CAPTURE;
D O I：
10.1007/s10762-014-0119-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate properties of MBE grown photoconductive terahertz (THz) antennas based on the InGaAs/InAlAs/InP material system aimed for an excitation wavelength of approx. 1060 nm. Therefore, we analyze several different approaches concerning growth parameters, layer and material compositions as well as doping. The carrier dynamics are probed via transient white-light pump-probe spectroscopy as well as THz Time Domain Spectroscopy (TDS) measurements. We find that the electron capture probability is reduced for higher electron energies. By adjusting the material band gap this can be resolved and lifetimes of 1.3 ps are obtained. These short lifetimes enable the detection of THz TDS spectra with a bandwidth exceeding 4 THz.
引用
收藏
页码：60 / 71
页数：12
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