Ga homogenization by simultaneous H2Se/H2S reaction of Cu-Ga-In precursor

被引：33
|
作者：
Kim, Woo Kyoung [1 ,2 ]
Hanket, Gregory M. [1 ]
Shafarman, William N. [1 ]
机构：
[1] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA
[2] Yeungnam Univ, Sch Display & Chem Engn, Gyongsan 712749, Gyeongbuk, South Korea
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2011年 / 95卷 / 01期
关键词：
Cu(InGa)(SeS)(2); CIGSS; Selenization; Sulfization; Phase segregation;
D O I：
10.1016/j.solmat.2010.04.050
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The compositional distribution of Ga and S in Cu(InGa)(SeS)(2) films fabricated by a simultaneous selenization and sulfization process was systematically investigated. At low H2Se/H2S reaction temperature (490 degrees C), most Ga remains at the back of the film adjacent to the Mo back contact. However, the Ga/III ratios at the top and bottom of the Cu(InGa)(SeS)(2) layer monotonically increase and decrease with reaction temperatures, respectively. At T > 550 degrees C, homogeneous distribution of elemental Ga and In through film is achieved. Further increase of the reaction temperature (e.g., T > 550 degrees C) causes phase segregation on the surface of the Cu(InGa)(SeS)(2) film confirmed by XRD, GIXRD and EDS analysis. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：235 / 238
页数：4
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