Ga homogenization by simultaneous H2Se/H2S reaction of Cu-Ga-In precursor

被引：33

作者：

Kim, Woo Kyoung ^{[1
,2
]}

Hanket, Gregory M. ^{[1
]}

Shafarman, William N. ^{[1
]}

机构：

[1] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA

[2] Yeungnam Univ, Sch Display & Chem Engn, Gyongsan 712749, Gyeongbuk, South Korea

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2011年 / 95卷 / 01期

关键词：

Cu(InGa)(SeS)(2); CIGSS; Selenization; Sulfization; Phase segregation;

D O I：

10.1016/j.solmat.2010.04.050

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The compositional distribution of Ga and S in Cu(InGa)(SeS)(2) films fabricated by a simultaneous selenization and sulfization process was systematically investigated. At low H2Se/H2S reaction temperature (490 degrees C), most Ga remains at the back of the film adjacent to the Mo back contact. However, the Ga/III ratios at the top and bottom of the Cu(InGa)(SeS)(2) layer monotonically increase and decrease with reaction temperatures, respectively. At T > 550 degrees C, homogeneous distribution of elemental Ga and In through film is achieved. Further increase of the reaction temperature (e.g., T > 550 degrees C) causes phase segregation on the surface of the Cu(InGa)(SeS)(2) film confirmed by XRD, GIXRD and EDS analysis. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：235 / 238

页数：4

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