+Three-step H2Se/Ar/H2S Reaction of Metal Precursors for Large Area Cu(In, Ga)(Se, S)2 with Uniform Ga Distribution

被引：0

作者：

Kim, Kihwan ^{[1
]}

Kimberly, Evan L. ^{[1
]}

Damiani, Andrew ^{[1
]}

Hanket, Gregory M. ^{[1
]}

Shafarman, William N. ^{[1
]}

机构：

[1] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA

来源：

2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2 | 2013年

关键词：

Diode; Energy conversion; Inorganic compound; Photovoltaic cells; Thin film devices;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A three-step H2Se/Ar/H2S reaction is used to process Cu-In-Ga metal precursors to form Cu(In, Ga)(Se, S)(2) films over 10 x 10 cm(2) substrates. The 1st selenization step gives fine microstructure with Ga accumulation near the Mo back contact, primarily in a CU9Ga4 phase. Significant grain growth with homogenous through-film Ga distribution is obtained by the 2nd Ar annealing step. The 3rd sulfization step completes the reaction process and incorporates S near the Cu(In, Ga)Se-2 surface. The resulting films show good adhesion and yielded devices with eta = 14.8% and V-OC = 612 mV.

引用

页数：6

共 50 条

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