Extreme ultraviolet lithography: overview and development status

被引：89
|
作者：
Silverman, PJ [1 ]
机构：
[1] Intel Corp, Santa Clara, CA 95054 USA
来源：
JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS | 2005年 / 4卷 / 01期
关键词：
extreme ultraviolet lithography; exposure tools; 193-nm immersion lithography;
D O I：
10.1117/1.1862647
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Extreme ultraviolet (EUV) lithography has emerged as the most likely successor to 193-nm lithography. We provide a technical overview of EUV lithography and a discussion of the advantages of EUV lithography over alternative technologies. The key challenges in developing EUV exposure tools for high-volume production are discussed. A brief assessment is given of the cost of ownership of EUV lithography in comparison with 193-nm immersion lithography. (c) 2005 Society of Photo-Optical Instrumentation Engineers.
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页码：1 / 5
页数：5
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