Illumination system for extreme ultraviolet lithography

被引:17
|
作者
Haga, T
Kinoshita, H
机构
[1] NTT LSI Lab, Kanagawa
来源
关键词
D O I
10.1116/1.588278
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have designed and built a four-mirror grazing incidence, illumination system for extreme ultraviolet lithography that is applicable to a two-aspherical-mirror reduction system. It was designed for a synchrotron radiation source, acid it provides uniform illumination (size: 100 x 125 mm) and proper numerical aperture for incoherent illumination of the demagnifying optics. A large illumination area was achieved by an oscillating mirror and synchronous movement of the mask and wafer stages. Experimental results have demonstrated that, with a reduction ratio of 1/5, this system is capable of replicating chips of practical size (20 x 25 mm). (C) 1995 American Vacuum Society.
引用
收藏
页码:2914 / 2918
页数:5
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