Illumination system for extreme ultraviolet lithography

被引:17
|
作者
Haga, T
Kinoshita, H
机构
[1] NTT LSI Lab, Kanagawa
来源
关键词
D O I
10.1116/1.588278
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have designed and built a four-mirror grazing incidence, illumination system for extreme ultraviolet lithography that is applicable to a two-aspherical-mirror reduction system. It was designed for a synchrotron radiation source, acid it provides uniform illumination (size: 100 x 125 mm) and proper numerical aperture for incoherent illumination of the demagnifying optics. A large illumination area was achieved by an oscillating mirror and synchronous movement of the mask and wafer stages. Experimental results have demonstrated that, with a reduction ratio of 1/5, this system is capable of replicating chips of practical size (20 x 25 mm). (C) 1995 American Vacuum Society.
引用
收藏
页码:2914 / 2918
页数:5
相关论文
共 50 条
  • [41] Incident Angle Change Caused by Different Off-Axis Illumination in Extreme Ultraviolet Lithography
    Kim, Eun-Jin
    You, Jee-Hye
    Kim, Seong-Sue
    Cho, Han-Ku
    An, Ilsin
    Oh, Hye-Keun
    [J]. ALTERNATIVE LITHOGRAPHIC TECHNOLOGIES, 2009, 7271
  • [42] Stamps for nanoimprint lithography by extreme ultraviolet interference lithography
    Park, S
    Schift, H
    Solak, HH
    Gobrecht, J
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (06): : 3246 - 3250
  • [43] Grouping design method dependence on an illumination system and large off-axis distance for an anamorphic extreme ultraviolet lithography objective
    Yan, Xu
    Li, Yanqiu
    Liu, Lihui
    Liu, Ke
    [J]. APPLIED OPTICS, 2022, 61 (03) : 806 - 811
  • [44] Extreme ultraviolet lithography: Status and prospects
    Benschop, Jos
    Banine, Vadim
    Lok, Sjoerd
    Loopstra, Erik
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (06): : 2204 - 2207
  • [45] Design correction in extreme ultraviolet lithography
    Fenger, Germain L.
    Lorusso, Gian F.
    Hendrickx, Eric
    Niroomand, Ardavan
    [J]. JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2010, 9 (04):
  • [46] Extreme ultraviolet lithography: Will it be ready in time?
    Hutcheson, GD
    [J]. IEEE SPECTRUM, 2001, 38 (11) : 15 - 16
  • [47] Sober view on extreme ultraviolet lithography
    Lin, Burn J.
    [J]. JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS, 2006, 5 (03):
  • [48] Reducing Roughness in Extreme Ultraviolet Lithography
    Mack, Chris A.
    [J]. INTERNATIONAL CONFERENCE ON EXTREME ULTRAVIOLET LITHOGRAPHY 2017, 2017, 10450
  • [49] Extreme ultraviolet lithography masks technology
    Yang, Xiong
    Jin, Chun-Shui
    Cao, Jian-Lin
    [J]. Weixi Jiagong Jishu/Microfabrication Technology, 2003, (03):
  • [50] Mask technology of extreme ultraviolet lithography
    Kinoshita, H
    Watanabe, T
    Ozawa, A
    Niibe, M
    [J]. PHOTOMASK AND X-RAY MASK TECHNOLOGY V, 1998, 3412 : 358 - 368