Injection-controlled size effect on switching of ferroelectric thin films

被引:178
|
作者
Tagantsev, AK [1 ]
Stolichnov, IA [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Lab Ceram, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1063/1.123539
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effect of near-by-electrode charge injection on switching of a thin film ferroelectric capacitor is theoretically analyzed. We develop a model of switching affected by charge injection through a surface dielectric layer to calculate the coercive field of the capacitor as a function of both film thickness and maximal polarization of the switching cycle. The predictions of the model are verified by electrical measurements on sol-gel derived Pb(Zr, Ti)O-3 thin films of thickness ranging from 100 to 1000 nm with Pt electrodes. The model gives a good description of the size effect on switching in the Pt/Pb(Zr, Ti)O-3/Pt system and enables an explanation for a much smaller magnitude of this effect in Bi-containing and oxide-electrode thin films. (C) 1999 American Institute of Physics. [S0003-6951(99)00409-X].
引用
收藏
页码:1326 / 1328
页数:3
相关论文
共 50 条
  • [1] Size effects in polarization switching in ferroelectric thin films
    Tagantsev, AK
    [J]. INTEGRATED FERROELECTRICS, 1997, 16 (1-4) : 237 - 244
  • [2] Superconducting-Ferromagnetic Injection-Controlled Switching Device
    Nevirkovets, Ivan P.
    Chernyashevskyy, Oleksandr
    Walter, Jason
    Mukhanov, Oleg A.
    [J]. IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2019, 29 (05)
  • [3] Switching of ferroelectric thin films
    Chen, J
    Ho, KS
    Lin, J
    Rabson, TA
    [J]. INTEGRATED FERROELECTRICS, 1995, 10 (1-4) : 215 - 222
  • [4] Effect of domain nucleation on switching of ferroelectric thin films
    Zhang, HZ
    Robert, M
    Rabson, TA
    [J]. INTEGRATED FERROELECTRICS, 2002, 44 : 125 - 134
  • [5] Charge Injection Controlled Capacitance Degradation in Ferroelectric Thin Films
    Jiang, A. Q.
    Tang, T. A.
    [J]. FERROELECTRICS, 2010, 405 : 249 - 254
  • [6] Experimental evidence of the size effect in thin ferroelectric films
    Vendik, OG
    Zubko, SP
    Ter-Martirosayn, LT
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (01) : 37 - 39
  • [7] Size effect on permittivity in ferroelectric polydomain thin films
    Mokry, P
    Tagantsev, AK
    Setter, N
    [J]. PHYSICAL REVIEW B, 2004, 70 (17) : 1 - 4
  • [8] Size effect and fatigue mechanism in ferroelectric thin films
    Jin, HZ
    Zhu, J
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (08) : 4594 - 4598
  • [9] Reversible charge injection-controlled resistance switching in BiFeO3 ferrodiodes
    Chen, Dongfang
    Shen, Bowen
    Tan, Xiaojun
    Jiang, Jun
    [J]. APPLIED PHYSICS LETTERS, 2023, 123 (18)
  • [10] The effect of hydrogen on switching properties of ferroelectric PZT thin films
    Joo, Heung Jin
    Lee, Sang Hern
    Kim, Jong Pil
    Ryu, Min Ki
    Kim, Tae Gyoung
    Kim, Do Han
    Jang, Min Su
    Kim, Young Deog
    [J]. Ferroelectrics, 2001, 260 (01) : 93 - 98