Injection-controlled size effect on switching of ferroelectric thin films

被引:178
|
作者
Tagantsev, AK [1 ]
Stolichnov, IA [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Lab Ceram, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1063/1.123539
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effect of near-by-electrode charge injection on switching of a thin film ferroelectric capacitor is theoretically analyzed. We develop a model of switching affected by charge injection through a surface dielectric layer to calculate the coercive field of the capacitor as a function of both film thickness and maximal polarization of the switching cycle. The predictions of the model are verified by electrical measurements on sol-gel derived Pb(Zr, Ti)O-3 thin films of thickness ranging from 100 to 1000 nm with Pt electrodes. The model gives a good description of the size effect on switching in the Pt/Pb(Zr, Ti)O-3/Pt system and enables an explanation for a much smaller magnitude of this effect in Bi-containing and oxide-electrode thin films. (C) 1999 American Institute of Physics. [S0003-6951(99)00409-X].
引用
收藏
页码:1326 / 1328
页数:3
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