Effect of thicknesses on phase formation of nickel silicide thin films by RTA process

In this paper, the effect of thicknesses on phase formation of nickel silicide thin films by RTA process is investigated. By chemical reactions, nucleation and growth processes, the nickel thin films are deposited onto the silicon wafers in the nickel-plating bath. The cross sections of nickel thin films of 200nm, 400nm and 600nm thick by light induced electroless plating of nickel are identified by SEM images. The RTA process is performed for the phase formation of nickel silicide thin films. The XRD spectra present the phase formation of nickel silicide thin films in the form of peaks. The reduction in the series resistance is due to the phase formation of nickel silicide thin films and the minimum series resistance of 0.66cm(2) is obtained from the dark current-voltage curves in the upper voltage range for the sample with nickel thin film of 400nm thick. The effect of thicknesses on phase formation of nickel silicide thin films by RTA process is confirmed.