Effect of thicknesses on phase formation of nickel silicide thin films by RTA process

被引：0

作者：

Li, Tao ^{[1
]}

Wang, Wenjing ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Elect Engn, Key Lab Solar Thermal Energy & Photovolta Syst, Beijing, Peoples R China

来源：

INTEGRATED FERROELECTRICS | 2016年 / 171卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Nickel silicide thin films; RTA process; XRD spectra; dark current-voltage; SOLAR-CELLS; PARAMETERS;

D O I：

10.1080/10584587.2016.1174916

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the effect of thicknesses on phase formation of nickel silicide thin films by RTA process is investigated. By chemical reactions, nucleation and growth processes, the nickel thin films are deposited onto the silicon wafers in the nickel-plating bath. The cross sections of nickel thin films of 200nm, 400nm and 600nm thick by light induced electroless plating of nickel are identified by SEM images. The RTA process is performed for the phase formation of nickel silicide thin films. The XRD spectra present the phase formation of nickel silicide thin films in the form of peaks. The reduction in the series resistance is due to the phase formation of nickel silicide thin films and the minimum series resistance of 0.66cm(2) is obtained from the dark current-voltage curves in the upper voltage range for the sample with nickel thin film of 400nm thick. The effect of thicknesses on phase formation of nickel silicide thin films by RTA process is confirmed.

引用

页码：178 / 185

页数：8

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