Determination of pore-size distributions in low-k dielectric films by transmission electron microscopy

被引：0

作者：

Foran, BJ ^{[1
]}

Kastenmeier, B ^{[1
]}

Bright, DS ^{[1
]}

机构：

[1] Int SEMATECH, Austin, TX 78741 USA

来源：

CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY | 2003年 / 683卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper discusses methods of characterizing pore size distributions in low dielectric constant (low-k) films by transmission electron microscopy (TEM), comparing both conventional TEM and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Methods of sample preparation were tailored to protect pore structure during cross-sectional thinning allowing techniques similar to conventional mechanical polishing and low-angle ion milling. Knowledge of TEM sample thickness allows quantification of pore density distributions. TEM sample thickness and quantitative image analysis methods are discussed.

引用

页码：556 / 561

页数：6

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