Determination of pore-size distributions in low-k dielectric films by transmission electron microscopy

被引：0

作者：

Foran, BJ ^{[1
]}

Kastenmeier, B ^{[1
]}

Bright, DS ^{[1
]}

机构：

[1] Int SEMATECH, Austin, TX 78741 USA

来源：

CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY | 2003年 / 683卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper discusses methods of characterizing pore size distributions in low dielectric constant (low-k) films by transmission electron microscopy (TEM), comparing both conventional TEM and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Methods of sample preparation were tailored to protect pore structure during cross-sectional thinning allowing techniques similar to conventional mechanical polishing and low-angle ion milling. Knowledge of TEM sample thickness allows quantification of pore density distributions. TEM sample thickness and quantitative image analysis methods are discussed.

引用

页码：556 / 561

页数：6

共 50 条

[21] Analysis of Low-k Dielectric Thin Films on Thick Substrates by Transmission FTIR Spectroscopy
Milosevic, Milan
King, Sean W.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 4 (01) : N3146 - N3152
[22] STUDIES ON PORE STRUCTURE OF ADSORBENTS AND CATALYSTS .1. DETERMINATION OF PORE-SIZE DISTRIBUTION OF SYNTHETIC CHRYSOTILE BY ELECTRON-MICROSCOPY
SCHOLTEN, JJ
BEERS, AM
KIEL, AM
JOURNAL OF CATALYSIS, 1975, 36 (01) : 23 - 29
[23] A NEW METHOD FOR THE RAPID-DETERMINATION OF PORE-SIZE DISTRIBUTIONS WITH THE FRONTAL CHROMATOGRAPHY
DAI, MG
WEI, ZN
ACTA CHIMICA SINICA, 1984, 42 (10) : 1026 - 1031
[24] Deposition of low-k dielectric films using trimethylsilane
Loboda, MJ
Seifferly, JA
Schneider, RF
Grove, CM
PROCEEDINGS OF THE SYMPOSIA ON ELECTROCHEMICAL PROCESSING IN ULSI FABRICATION I AND INTERCONNECT AND CONTACT METALLIZATION: MATERIALS, PROCESSES, AND RELIABILITY, 1999, 98 (06): : 145 - 152
[25] Analysis of pore size distribution in low-k porous silica films incorporated with ethylene groups
Uchida, Y
Ohdairai, T
Suzuki, R
Maruyama, Y
Katoh, T
Ishida, K
ADVANCED METALLIZATION CONFERENCE 2004 (AMC 2004), 2004, : 437 - 441
[26] Solvent diffusion in porous low-k dielectric films
Shamiryan, D
Maex, K
MATERIALS, TECHNOLOGY AND RELIABILITY FOR ADVANCED INTERCONNECTS AND LOW-K DIELECTRICS-2003, 2003, 766 : 229 - 234
[27] Nanoindentation of silicate low-k dielectric thin films
Vella, JB
Volinsky, AA
Adhihetty, IS
Edwards, NV
Gerberich, WW
SILICON MATERIALS-PROCESSING, CHARACTERIZATION AND RELIABILITY, 2002, 716 : 619 - 624
[28] DETERMINATION OF PORE-SIZE CHARACTERISTICS OF UNIFORM GRANULAR SOILS FROM THEIR GRAIN-SIZE DISTRIBUTIONS
ALZAYDI, AA
ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING, 1990, 15 (2A): : 145 - 154
[29] Advances in Metrology for the Determination of Young's Modulus for low-k Dielectric Thin Films
King, Sean W.
Antonelli, George A.
Stan, Gheorghe
Cook, Robert F.
Sooryakumar, R.
INSTRUMENTATION, METROLOGY, AND STANDARDS FOR NANOMANUFACTURING, OPTICS, AND SEMICONDUCTORS VI, 2012, 8466
[30] Small angle x-ray scattering for measuring pore-size distributions in porous low-κ films
Omote, K
Ito, Y
Kawamura, S
APPLIED PHYSICS LETTERS, 2003, 82 (04) : 544 - 546

← 1 2 3 4 5 →