Determination of pore-size distributions in low-k dielectric films by transmission electron microscopy

被引：0
|
作者：
Foran, BJ [1 ]
Kastenmeier, B [1 ]
Bright, DS [1 ]
机构：
[1] Int SEMATECH, Austin, TX 78741 USA
来源：
CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY | 2003年 / 683卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper discusses methods of characterizing pore size distributions in low dielectric constant (low-k) films by transmission electron microscopy (TEM), comparing both conventional TEM and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Methods of sample preparation were tailored to protect pore structure during cross-sectional thinning allowing techniques similar to conventional mechanical polishing and low-angle ion milling. Knowledge of TEM sample thickness allows quantification of pore density distributions. TEM sample thickness and quantitative image analysis methods are discussed.
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页码：556 / 561
页数：6
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