A HUMIDITY SENSOR WITH HIGH SENSITIVITY AND LOW TEMPERATURE COEFFICIENT OF FREQUENCY BASED ON ALN SURFACE ACOUSTIC WAVE AND GRAPHENE OXIDE SENSING LAYER

被引：0
|
作者：
Le, Xianhao [1 ]
Ding, Hong [1 ]
Pang, Jintao [1 ]
Wang, Yixiang [1 ]
Xie, Jin [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Fluid Power & Mechatron Syst, Hangzhou 310027, Zhejiang, Peoples R China
来源：
2017 19TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS (TRANSDUCERS) | 2017年
基金：
中国国家自然科学基金;
关键词：
Humidity sensor; surface acoustic wave; AlN thin film; highly doped Si; graphene oxide; FILM;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports a humidity sensor based on AlN surface acoustic wave (SAW) device coated with graphene oxide (GO) as sensing layer. Utilizing a layered structure consisted of a thin AlN layer and a highly doped Si substrate layer, the temperature coefficient of frequency (TCF) of the sensor is found to be around -22.1 ppm/degrees C, much smaller than conventional SAW humidity sensors. Moreover, the sensor has a wide detection range from 5% to 95% RH and shows high sensitivity up to 420.8 kHz/10% RH at 90% RH. Little hysteresis, excellent repeatability, fast response and short recovery time of the sensor are obtained. The sensor also has a good stability in a period of 28 days.
引用
收藏
页码：210 / 213
页数：4
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