AlN sensor based on surface acoustic wave with signal amplification by AlN/GaN HEMT

This article presents from the sensor based on a surface acoustic wave(SAW) GaN transistors for processing the output signal and placed at the sensor chip. The results of development of sensors based on surface acoustic waves in epitaxial films A1N are demonstrated. Operating frequency of structures for SAW was 930 MHz. A1NGaN high electron mobility transistor (HEMT) with a nanoscale T-shaped gate and very low barrier thickness is described. The efficiency and selectivity of sensory structures in liquid media with different compositions were demonstrated. The observed sensitivity of the SAW phase change is 6 while varying the concentration of sucrose in the solution at 5%.