A surface-potential-based model for AlGaN/AlN/GaN HEMT

被引：0

作者：

汪洁 ^{[1
,2
]}

孙玲玲 ^{[2
]}

刘军 ^{[2
]}

周明珠 ^{[2
]}

机构：

[1] Department of Electrical Engineering,Zhejiang University

[2] Key Laboratory of RF Circuits and Systems,Ministry of Education,Hangzhou Dianzi University

来源：

Journal of Semiconductors | 2013年 / 09期

基金：

美国国家科学基金会;

关键词：

AlGaN/AlN/GaN HEMT; 2DEG; surface potential; polarization effects; mobility;

D O I：

暂无

中图分类号：

TN32 [半导体三极管（晶体管）];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

A new surface-potential-based model for AlGaN/AlN/GaN high electron mobility transistor(HEMT) is proposed in this paper. Since the high polarization effects caused by AlN interlayer favorably influence the two dimensional electron gas(2DEG) and scattering mechanisms, we first add spontaneous and piezoelectric charge terms to the source equation of surface-potential, and a mobility model for AlGaN/AlN/GaN HEMT is rewritten. Compared with TCAD simulations, the DC characteristics of AlGaN/AlN/GaN HEMT are faithfully reproduced by the new model.

引用

页码：45 / 48

页数：4

共 6 条

[1] 基于表面势的GaN HEMT集约内核模型
汪洁
孙玲玲
刘军
[J]. 微波学报, 2012, (06) : 1 - 5
[2] 一个连续且解析的SOI LDMOS表面势模型(英文)
徐文杰
孙玲玲
刘军
李文钧
张海鹏
吴颜明
何佳
[J]. Journal of Semiconductors, 2007, (11) : 1712 - 1716
[3] An electron mobility model for wurtzite GaN
Schwierz, F
[J]. SOLID-STATE ELECTRONICS, 2005, 49 (06) : 889 - 895
[4] Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model .2 Yu,Tsung-Hsing,Brennan,Kevin F. IEEE Transactions on Electron Devices . 2003
[5] GaAs FET device and circuit simulation in SPICE .2 Statz H,Newman P,Smith I W,et al. IEEE Trans Electron Devices . 1987
[6] A new empirical nonlinear model for HEMT and MESFET devices .2 Angelov,I,Zirath,H,Rosman,N. Microwave Theory and Techniques, IEEE Transactions on . 1992

← 1 →