Properties of surface acoustic waves in AlN and GaN

被引：0

作者：

Deng, JY ^{[1
]}

Ciplys, D ^{[1
]}

Bu, G ^{[1
]}

Shur, M ^{[1
]}

Gaska, R ^{[1
]}

机构：

[1] Sensor Elect Technol Inc, Columbia, SC 29209 USA

来源：

GAN AND RELATED ALLOYS-2002 | 2003年 / 743卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The surface acoustic wave velocities, electromechanical coupling coefficients, and the spatial distributions of both elastic displacement and electric potential have been calculated for various configurations of gallium nitride and aluminium nitride. The electromechanical coupling coefficient values of 0.13% in GaN and 0.29% in AlN have been predicted. The maximum electromechanical coupling coefficient values of 0.24% at Euler angles (0, 54degrees, 90degrees) in GaN and 1.08% at (0, 53degrees, 90degrees) in AlN have been found. For GaN layer-on- sapphire substrate structures, the SAW velocity and electromechanical coupling coefficient have been calculated as functions of layer thickness and acoustic wavelength. The experimentally measured values of the surface acoustic wave velocity and electromechanical coupling coefficient are in satisfactory agreement with the calculation results.

引用

页码：455 / 460

页数：6

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