Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors

被引：1721

作者：

Wang, Xinran ^{[1
,2
]}

Ouyang, Yijian ^{[3
]}

Li, Xiaolin ^{[1
,2
]}

Wang, Hailiang ^{[1
,2
]}

Guo, Jing ^{[3
]}

Dai, Hongjie ^{[1
,2
]}

机构：

[1] Stanford Univ, Dept Chem, Stanford, CA 94305 USA

[2] Stanford Univ, Adv Mat Lab, Stanford, CA 94305 USA

[3] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 100卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.100.206803

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Sub-10 nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10 nm GNRs afforded semiconducting FETs without exception, with I-on/I-off ratio up to 10(6) and on-state current density as high as similar to 2000 mu A/mu m. We estimated carrier mobility similar to 200 cm(2)/V s and scattering mean free path similar to 10 nm in sub-10 nm GNRs. Scattering mechanisms by edges, acoustic phonon, and defects are discussed. The sub-10 nm GNRFETs are comparable to small diameter (d <=similar to 1.2 nm) carbon nanotube FETs with Pd contacts in on-state current density and I-on/I-off ratio, but have the advantage of producing all-semiconducting devices.

引用

页数：4

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