Modeling of GaN HEMTs on Silicon with Trapping and. Self-heating Effects for RF Applications

被引:0
|
作者
Tsou, Chuan-Wei [1 ]
Tu, Po-Tsung [1 ]
Tsai, Kan-Hsueh [1 ]
Yeh, Po-Chun [1 ]
Lee, Heng-Yuan [1 ]
Lee, Li-Heng [1 ]
Hsu, Shawn S. H. [2 ]
机构
[1] Ind Technol Res Inst, Hsinchu, Taiwan
[2] Natl Tsing Hua Univ, Hsinchu, Taiwan
关键词
ALGAN/GAN HEMTS; SUBSTRATE;
D O I
暂无
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
In this paper, the pulsed IV, small-signal, and load-pull measurements are employed for characterization of GaN-on-Si HEMTs to establish the large-signal model for RF applications. A modified Angelov model was proposed, which achieved excellent agreement with the measured results. Both trapping and self-heating effects are identified based on the pulsed IV measurements, while the charge model are established based on small-signal measurements. Finally, the load-pull simulation and measurements were used to verify the accuracy of large-signal characteristics.
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页数:2
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