Implementation of Self-heating and Trapping Effects in Surface Potential Model of AlGaN/GaN HEMTs

被引：0
|
作者：
Wu, Qingzhi [1 ]
Xu, Yuehang [1 ]
Wang, Zhigang [1 ]
Xia, Lei [1 ]
Yan, Bo [1 ]
Xu, Ruimin [1 ]
机构：
[1] Univ Elect Sci & Technol China, Sch Elect Engn, Chengdu, Sichuan, Peoples R China
来源：
2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2017年
基金：
中国国家自然科学基金; 中国博士后科学基金;
关键词：
AlGaN/GaN HEMT; surface potential; self-heating; trapping effects; DEVICES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The self-heating and charge trapping effects are implemented in surface-potential (SP) based large signal model of AlGaN/GaN HEMTs in this paper. The self-heating effect (SHE) is incorporated into nonlinear current model by embedding temperature increment into free-carrier mobility model. Moreover, the dispersion due to trapping effect is modeled through an effective gate-source voltage based methods. The experimental results show that the proposed model can accurately predict the static (DC) and pulsed-gate-and-drain IV (PIV) characteristics of the device over a wide bias. And the small-signal and large-signal behavior is also verified with good accuracy.
引用
收藏
页码：232 / 235
页数：4
相关论文
共 50 条
  • [1] Fast Model Generation for AlGaN/GaN HEMTs with the Consideration of Self-heating and Charge Trapping Effects
    Huang, Andong
    Zhong, Zheng
    Guo, Yongxin
    Wu, Wen
    [J]. 2016 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP), 2016,
  • [2] Investigation of self-heating effects in AlGaN/GaN HEMTs
    Kuzmik, J
    Javorka, P
    Alam, A
    Marso, M
    Heuken, M
    Kordos, P
    [J]. EDMO 2001: INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2001, : 21 - 26
  • [3] A Temperature Dependent Empirical Model for AlGaN/GaN HEMTs Including Charge Trapping and Self-Heating Effects
    Huang, Andong
    ZhengZhong
    Guo, Yongxin
    WenWu
    [J]. 2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2017, : 244 - 247
  • [4] A New Compact Model for AlGaN/GaN HEMTs Including Self-Heating Effects
    Wen, Zhang
    Xu, Yuehang
    Wu, Qingzhi
    Zhang, Yong
    Xu, Ruimin
    Yan, Bo
    [J]. 2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2017, : 248 - 251
  • [5] Strain relaxation and self-heating effects of fin AlGaN/GaN HEMTs
    Wang, Ashu
    Zeng, Lingyan
    Wang, Wen
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2023, 38 (03)
  • [6] Self-heating and traps effects on the drain transient response of AlGaN/GaN HEMTs
    Zhang Yamin
    Feng Shiwei
    Zhu Hui
    Gong Xueqin
    Deng Bing
    Ma Lin
    [J]. JOURNAL OF SEMICONDUCTORS, 2014, 35 (10)
  • [7] Self-heating and traps effects on the drain transient response of AlGaN/GaN HEMTs
    张亚民
    冯士维
    朱慧
    龚雪芹
    邓兵
    马琳
    [J]. Journal of Semiconductors, 2014, (10) : 41 - 44
  • [8] Self-heating and traps effects on the drain transient response of AlGaN/GaN HEMTs
    张亚民
    冯士维
    朱慧
    龚雪芹
    邓兵
    马琳
    [J]. Journal of Semiconductors., 2014, 35 (10) - 44
  • [9] Transient self-heating effects in multifinger AlGaN/GaN HEMTs, with metal airbridges
    Kuzmik, J.
    Bychikhin, S.
    Lossy, R.
    Wuerfl, H. J.
    Poisson, M.-A. di Forte
    Teyssier, J.-P.
    Gaquiere, C.
    Pogany, D.
    [J]. SOLID-STATE ELECTRONICS, 2007, 51 (06) : 969 - 974
  • [10] The Impact of Bias Conditions on Self-Heating in AlGaN/GaN HEMTs
    Choi, Sukwon
    Heller, Eric R.
    Dorsey, Donald
    Vetury, Ramakrishna
    Graham, Samuel
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (01) : 159 - 162
12345