Optical characterization of heavily Sn-doped GaAs1-xSbx epilayers grown by molecular beam epitaxy on (001) GaAs substrates

被引：5
|
作者：
Nishino, F [1 ]
Takei, T [1 ]
Kato, A [1 ]
Jinbo, Y [1 ]
Uchitomi, N [1 ]
机构：
[1] Nagaoka Univ Technol, Dept Elect Engn, Nagaoka, Niigata 9402188, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 1B期
关键词：
GaAsSb; Sn doping; molecular beam epitaxy;
D O I：
10.1143/JJAP.44.705
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have optically investigated ternary GaAs1-xSbx (x < 0.58) epilayers and Sn-doped GaAs1-xSbx (x = 0.10-0.14) epilayers grown by molecular beam epitaxy on GaAs (001) substrates. Sn-doped GaAsSb layers were grown as a function of Sn Knudsen-cell temperature, and then characterized by low-temperature photoluminescence (PL) measurements and Hall effect measurements'. The Sn-doped GaAsSb films grown at a K-cell temperature of 670 degrees C changed from exhibiting p-type conduction to exhibiting n-type conduction, and showed a maximum PL intensity and a maximum electron mobility of 1900 cm(2)/V s. The PL intensities obtained for Sn-doped GaAsSb films showed a relatively good correlation with the variations in Hall mobility.
引用
收藏
页码：705 / 708
页数：4
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