State-of-the-Art GaN Vertical Power Devices

被引：0

作者：

Kachi, Tetsu ^{[1
]}

机构：

[1] Toyota Cent Res & Dev Labs Inc, 41-1 Yokomichi, Nagakute, Aichi 4801192, Japan

来源：

2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2015年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent progress and developing issues of GaN vertical power devices are reviewed. Quality improvement of GaN substrates activates the research. 2kV level pn diodes and 1.5kV level vertical transistors have been reported recently. However, some issues to be solved still exist to show high ability of GaN.

引用

页数：4

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