Vertical GaN Power Devices

被引：0

作者：

Li, Wenwen

Ji, Dong ^{[1
,2
]}

机构：

[1] Chinese Univ Hong Kong, Sch Sci & Engn, Shenzhen, Peoples R China

[2] Chinese Univ Hong Kong, Future Network Intelligence Inst, Shenzhen, Peoples R China

来源：

2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年

关键词：

GaN; Power Electronics and Vertical Power Device; DIODES; TERMINATION; DESIGN; OXIDE;

D O I：

10.1109/EDTM55494.2023.10103087

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN devices, in the form of the lateral AlGaN/GaN HEMTs, have shown great performance in medium power applications. However, to address the higher voltage applications (>1200V), devices with vertical geometry are necessary. In this paper, the progress made in vertical GaN technology has been reviewed. Key barriers, such as Mg ion implantation and regrowth, have been discussed.

引用

页数：3

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