SiC and GaN from the Viewpoint of Vertical Power Devices

被引：0
|
作者：
Suda, Jun [1 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan
来源：
2016 74TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2016年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页数：1
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