The state-of-the-art of GaAs and InP power devices and amplifiers

被引：47
|
作者：
Nguyen, C [1 ]
Micovic, M [1 ]
机构：
[1] HRL Labs, Malibu, CA 90265 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 03期
关键词：
D O I：
10.1109/16.906438
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Significant investments and R&D efforts over the past two decades have established GaAs and InP electronic device technologies from substrate manufacturing to MMIC amplifier design and testing. Today, GaAs and InP HBTs and HFETs, as far as gain, efficiency, and power are concerned, dominate the whole spectrum from S- to W-band and beyond, In this paper we will discuss recent advances in device technologies and survey the state of the art performance of GaAs and InP HFETs and HBTs.
引用
收藏
页码：472 / 478
页数：7
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