Long pulse ArF and F2 excimer lasers

被引:0
|
作者
Peters, PJM [1 ]
Feenstra, L [1 ]
Bastiaens, HMJ [1 ]
机构
[1] Univ Twente, Fac Appl Phys, Laser Phys Grp, NL-7500 AE Enschede, Netherlands
关键词
excimer laser; long pulse; 157; nm; 193; gas discharge; X-ray preionisation;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
For some specific application areas like CV)UV lithography or special processing of certain materials with high average power (V)UV lasers excimer lasers have to be developed further. In this contribution we will summarise the recent progress of our VUV excimer laser programme on the ArF and F-2 laser. Key point in our research programme is the production of long laser pulses in the order of 100 ns (FWHM). An existing laser chamber was modified and optimised for the ArF laser research programme. Different excitation circuits have been tested. For long pulse operation the laser is operated in the ferrite switched resonant overshoot mode using 18 cm(2) of ferrite in the switch for a discharge volume of approximately 60 x 0,7 x 1,2 cm(3). Long optical pulses of up to 116 ns have been obtained with a lean gas mixture and a very low self-inductance of the electrical circuit of the packing capacitors. For the Fz laser a new discharge chamber and a new X-ray preionisation source was designed. With this set-up it was possible to produce a Fz laser with a large optical cross-section of 1,5 x 2,4 cm(2) operating at an intrinsic efficiency of 0,1%. With a different electrical circuit the system produced long optical output pulses of 70 ns (FWHM) in a gas mixture of helium and 3 mbar F-2 at a total gas pressure of 2 bar.
引用
收藏
页码:338 / 347
页数:10
相关论文
共 50 条
  • [31] NOVEL F2 DETECTOR FOR THE GAS MONITOR OF AN EXCIMER LASER
    HAKUTA, K
    MUKAI, N
    MIKI, S
    TAKUMA, H
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1986, 57 (10): : 2529 - 2531
  • [32] CONTACT LITHOGRAPHY AT 157 NM WITH AN F2 EXCIMER LASER
    CRAIGHEAD, HG
    WHITE, JC
    HOWARD, RE
    JACKEL, LD
    BEHRINGER, RE
    SWEENEY, JE
    EPWORTH, RW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1186 - 1189
  • [33] Dual-beam ablation of fused silica by multiwavelength excitation process using KrF excimer and F2 lasers
    J. Zhang
    K. Sugioka
    T. Takahashi
    K. Toyoda
    K. Midorikawa
    Applied Physics A, 2000, 71 (1) : 23 - 26
  • [34] Dual-beam ablation of fused silica by multiwavelength excitation process using KrF excimer and F2 lasers
    Zhang, J
    Sugioka, K
    Takahashi, T
    Toyoda, K
    Midorikawa, K
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2000, 71 (01): : 23 - 26
  • [35] Deep etching of epitaxial gallium nitride film by multiwavelength excitation process using F2 and KrF excimer lasers
    K. Obata
    K. Sugioka
    K. Midorikawa
    T. Inamura
    H. Takai
    Applied Physics A, 2006, 82 : 479 - 483
  • [36] Deep etching of epitaxial gallium nitride film by multiwavelength excitation process using F2 and KrF excimer lasers
    Obata, K
    Sugioka, K
    Midorikawa, K
    Inamura, T
    Takai, H
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2006, 82 (03): : 479 - 483
  • [37] F2 lasers aren't just for lithography
    McCarthy, DC
    PHOTONICS SPECTRA, 2002, 36 (07) : 70 - 72
  • [38] Gain characteristics of longitudinally excited F2 lasers
    El-Osealy, MAM
    Jitsuno, T
    Nakamura, K
    Horiguchi, S
    OPTICS COMMUNICATIONS, 2002, 205 (4-6) : 377 - 384
  • [39] Line narrowing and injection locking of F2 lasers
    Ariga, T
    Hotta, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (8A): : 5279 - 5284
  • [40] Development of advanced bilayer silicone resists for ARF and F2 lithography
    Kanagasabapathy, S
    Barclay, GG
    Cameron, JF
    Pohlers, G
    Huby, F
    Wiley, K
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2004, 227 : U447 - U447