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- [2] CONTACT LITHOGRAPHY AT 157 NM WITH AN F2 EXCIMER LASERJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1186 - 1189CRAIGHEAD, HGWHITE, JCHOWARD, REJACKEL, LDBEHRINGER, RESWEENEY, JEEPWORTH, RW
- [3] GaN etching by simultaneous irradiation of KrF excimer laser and F2 laserLASER APPLICATIONS IN MICROELECTRONIC AND OPTOELECTRONIC MANUFACTURING VI, 2001, 4274 : 133 - 140Akane, TSugioka, KObata, KNomura, SHammura, KAoki, NToyoda, KAoyagi, YMidorikawa, K
- [4] Development of pellicle for F2(157nm) Excimer LaserPHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY X, 2003, 5130 : 606 - 616Shigematsu, SNakano, TShigemoto, HKondo, MNakagawa, H
- [5] GaN ablation etching by simultaneous irradiation with F2 laser and KrF excimer laserJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (04): : 1388 - 1391Akane, TSugioka, KHammura, KAoyagi, YMidorikawa, KObata, KToyoda, KNomura, S
- [6] Effect of preionization, fluorine concentration, and current density on the discharge uniforrhity in F2 excimer laser gas mlixturesJOURNAL OF APPLIED PHYSICS, 2007, 102 (03)Mathew, D.Bastiaens, H. M. J.Boller, K. J.Peters, P. J. M.
- [7] SUB-MICRON, VACUUM ULTRAVIOLET CONTACT LITHOGRAPHY WITH AN F2 EXCIMER LASERAPPLIED PHYSICS LETTERS, 1984, 44 (01) : 22 - 24WHITE, JCCRAIGHEAD, HGHOWARD, REJACKEL, LDBEHRINGER, REEPWORTH, RWHENDERSON, DSWEENEY, JE
- [8] Long pulse ArF and F2 excimer lasersXIII INTERNATIONAL SYMPOSIUM ON GAS FLOW AND CHEMICAL LASERS AND HIGH-POWER LASER CONFERENCE, 2000, 4184 : 338 - 347Peters, PJMFeenstra, LBastiaens, HMJ
- [9] Low alkaline contamination bilayer bottom antireflective coatings in F2 excimer laser lithographyELECTROCHEMICAL AND SOLID STATE LETTERS, 2002, 5 (09) : G89 - G92Chen, HLChuang, YFLee, CCKo, FHHsieh, CIHuang, TY
- [10] Spontaneous emission at 193 nm and gain measurements in F2 containing excimer gas mixturesXVI International Symposium on Gas Flow, Chemical Lasers, and High-Power Lasers, Pts 1 and 2, 2007, 6346 : O3460 - O3460Azarov, A. V.Peters, P. J. M.Boller, K. J.