Bottom-up silicon nanoelectronics

被引：0

作者：

Mizuta, H ^{[1
]}

Khalafalla, M ^{[1
]}

Durrani, ZAK ^{[1
]}

Uno, S ^{[1
]}

Koshida, N ^{[1
]}

Tsuchiya, Y ^{[1
]}

Oda, S ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Tokyo 152, Japan

来源：

2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an overview on recent topical studies on electronic properties and device applications of silicon nanodots as a bottom-up building block for silicon nanoelectronics. The electrostatic and quantum-mechanical interactions in double Si nanodots, the phononic states and electron-phonon interactions in the linear chain of Si nanodots covered with thin oxide layers, and the, non-volatile nanoelectromechanical memory device incorporating Si nanodots are discussed.

引用

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页码：864 / 868

页数：5

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