Bottom-up silicon nanoelectronics

This paper presents an overview on recent topical studies on electronic properties and device applications of silicon nanodots as a bottom-up building block for silicon nanoelectronics. The electrostatic and quantum-mechanical interactions in double Si nanodots, the phononic states and electron-phonon interactions in the linear chain of Si nanodots covered with thin oxide layers, and the, non-volatile nanoelectromechanical memory device incorporating Si nanodots are discussed.