Fabrication of Magnetic Tunnel Junctions with a Synthetic Ferrimagnetic Free Layer for Magnetic Field Sensor Applications

被引：17
|
作者：
Fujiwara, Kousuke [1 ]
Oogane, Mikihiko [1 ]
Kou, Futoyoshi [2 ]
Watanabe, Daisuke [3 ]
Naganuma, Hiroshi [1 ]
Ando, Yasuo [1 ]
机构：
[1] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, Japan
[2] RICOH Co Ltd, Corporate Technol Dev Grp, Natori, Miyagi 9811241, Japan
[3] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 01期
关键词：
ROOM-TEMPERATURE; MAGNETORESISTANCE;
D O I：
10.1143/JJAP.50.013001
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Magnetic tunnel junctions (MTJs) with a CoFeB/Ru/Ni80Fe20 synthetic ferrimagnetic free layer and an MgO barrier layer were fabricated. The effect of the shape and thickness of the free layer on the magnetic field sensor characteristics was systematically investigated. We achieved a high sensitivity of 4.8%/Oe in the MTJ with a 70-nm-thick Ni80Fe20 layer and an aspect ratio of 1.0. Here, sensitivity is defined as TMR/(2H(k)), where TMR is tunnel magnetoresistance ratio in the MTJ and H-k is a magnetic anisotropy field of the free layer. Furthermore, we successfully increased the detection field range up to 230 Oe while keeping high sensitivity and linearity. (c) 2011 The Japan Society of Applied Physics
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页数：3
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