Perpendicular magnetic tunnel junctions with synthetic ferrimagnetic pinned layer

被引：12
|
作者：
Choi, Gyung-Min [1 ]
Shin, Il-Jae [1 ]
Min, Byoung-Chul [1 ]
Shin, Kyung-Ho [1 ]
机构：
[1] Korea Inst Sci & Technol, Seoul 136791, South Korea
来源：
JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 07期
关键词：
ROOM-TEMPERATURE; MAGNETORESISTANCE; FILMS; ANISOTROPY; CO/RU;
D O I：
10.1063/1.3486059
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have fabricated perpendicular magnetic tunnel junctions (p-MTJs) consisting of CoPt/Ru/CoFeB/MgO/CoFeB/Pt. The tunnel magnetoresistance (TMR) of the p-MTJs characterizes the magnetic configurations of the CoPt/Ru/CoFeB pinned layer. The magnetic moment of the CoFeB, which is naturally in-plane, can be aligned to the out-of-plane direction by an indirect exchange coupling with the hcp CoPt alloy having large perpendicular magnetic anisotropy. When the applied field is relatively smaller than the exchange coupling strength, the p-MTJs show a configurationally negative TMR as a consequence of an antiparallel alignment of the CoPt and CoFeB magnetic moments. c 2010 American Institute of Physics. [doi: 10.1063/1.3486059]
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页数：5
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