Fabrication of magnetic tunnel junctions with a bottom synthetic antiferro-coupled free layers for high sensitive magnetic field sensor devices

被引：58
|
作者：
Fujiwara, Kosuke [1 ]
Oogane, Mikihiko [1 ]
Yokota, Saeko [1 ]
Nishikawa, Takuo [2 ]
Naganuma, Hiroshi [1 ]
Ando, Yasuo [1 ]
机构：
[1] Tohoku Univ, Dept Appl Phys, Sendai, Miyagi 9808579, Japan
[2] Konicaminolta Opto Inc, LC Business Dept, Hino, Tokyo 1918511, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 07期
关键词：
ROOM-TEMPERATURE; MAGNETORESISTANCE;
D O I：
10.1063/1.3677266
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Magnetic tunnel junctions with a Ni80Fe20/Ru/Co40Fe40B20 synthetic antiferro-coupled bottom free layer and an MgO barrier layer have been fabricated. Double annealing process was carried out in order to obtain linearity against magnetic field with hysteresis-free resistance response. The effect of the annealing temperature and NiFe thickness in the free layer on the magnetic field sensor performance was investigated. We have observed a very high sensitivity of 25.3%/Oe while keeping linearity. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3677266]
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页数：3
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