Non-quasi-static physics-based circuit model of fully-depleted double-gate SOI MOSFET

被引：4
|
作者：
Jankovic, N [1 ]
Pesic, T [1 ]
机构：
[1] Fac Elect Engn, Microelect Dept, Nish 18000, Serbia Monteneg
来源：
SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 07期
关键词：
D O I：
10.1016/j.sse.2005.03.024
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we describe a compact non-quasi-static (NQS) model of fully-depleted (FD) double-gate (DG) SOI MOSFETs developed on the modified NQS model for bulk single-gate devices. Based on the comparison with the 2-D numerical device simulations, it is shown that new NQS model can accurately predict dc, ac and transient characteristics of FD DG MOSFETs in all operational regions and for small-signal frequencies up to a few cut-off frequencies. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1086 / 1089
页数：4
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