Experimental study of sputter deposited contacts to gallium nitride

被引：0
|
作者：
Piquette, EC [1 ]
Bandic, ZZ [1 ]
McGill, TC [1 ]
机构：
[1] CALTECH, Watson Labs Appl Phys 128 95, Pasadena, CA 91125 USA
来源：
NITRIDE SEMICONDUCTORS | 1998年 / 482卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A variety of metal contacts to n-GaN is investigated, including Al, Au, Ce, Ti, Cr, Mg, Sb, W, and Mo, which were deposited using DC magnetron plasma sputtering onto MBE grown GaN. The contacts were characterized by current-voltage analysis and contact resistances were measured by the circular geometry transmission line method. The effects on contact resistance and Schotty barrier properties by surface sputtering treatments, GaN doping, and post-deposition annealing are reported.
引用
收藏
页码：1089 / 1094
页数：6
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